IRFI4019H-117P
MOSFET 2N-CH 150V 8.7A TO220-5Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies MOSFET Array, Part Number IRFI4019H-117P, features two N-channel MOSFETs in a TO-220-5 Full-Pak package, suitable for through-hole mounting. This component offers a drain-to-source voltage (Vdss) of 150V and a continuous drain current (Id) of 8.7A at 25°C, with a maximum power dissipation of 18W. Key electrical parameters include a gate charge (Qg) of 20nC (max) at 10V and input capacitance (Ciss) of 810pF (max) at 25V. The Rds On is specified at 95mOhm maximum at 5.2A and 10V gate-source voltage. Operating temperature range is from -55°C to 150°C. This MOSFET array finds application in power management, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 Full Pack |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 18W |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 25V |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 5.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Supplier Device Package | TO-220-5 Full-Pak |
Request a Quote
Clients Also Buy
FS33MR12W1M1HB11BPSA1
SIC 1200V AG-EASY1B
IRF7342PBF
MOSFET 2P-CH 55V 3.4A 8SO
IRF7311TRPBF
MOSFET 2N-CH 20V 6.6A 8SO
