IRFHS9351TR2PBF
MOSFET 2P-CH 30V 2.3A PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies MOSFET array, part number IRFHS9351TR2PBF. This dual P-channel device offers a 30V Vds rating and a continuous drain current of 2.3A at 25°C. Featuring a logic level gate, this MOSFET boasts a maximum Rds On of 170mOhm at 3.1A and 10V Vgs. The device has a maximum power dissipation of 1.4W and a gate charge (Qg) of 3.7nC at 10V. Input capacitance (Ciss) is specified at a maximum of 160pF at 25V. The IRFHS9351TR2PBF is supplied in a 6-PQFN Dual (2x2) surface mount package, presented in cut tape. This component is utilized in applications such as battery management, power switching, and portable electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 25V |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 3.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 10µA |
| Supplier Device Package | 6-PQFN Dual (2x2) |
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