IRFHM8363TRPBF
MOSFET 2N-CH 30V 11A 8PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Infineon Technologies HEXFET® IRFHM8363TRPBF is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C. The low on-resistance (Rds On) of 14.9mOhm at 10A and 10V, coupled with a 2.7W maximum power dissipation, makes it suitable for demanding power management tasks.
Engineered with a logic-level gate, the IRFHM8363TRPBF offers reduced drive voltage requirements. Key parameters include a gate charge (Qg) of 15nC (max) at 10V and input capacitance (Ciss) of 1165pF (max) at 10V. The MOSFET array is housed in an 8-PQFN (3.3x3.3) package, identified as Power33, and is supplied in tape and reel (TR) for automated assembly. Operating temperature ranges from -55°C to 150°C. This device finds application in automotive, industrial, and consumer electronics power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.7W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11A |
| Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
