IRFHM8363TR2PBF
MOSFET 2N-CH 30V 11A 8PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRFHM8363TR2PBF is a 2-channel N-channel MOSFET array designed for high-efficiency power management applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 11A at 25°C. The device offers low on-resistance of 14.9mOhm maximum at 10A and 10V, coupled with a 2.7W maximum power dissipation. Optimized for surface mounting, it is housed in an 8-PQFN-Dual (3.3x3.3) package. Key parameters include a Gate Charge (Qg) of 15nC at 10V and Input Capacitance (Ciss) of 1165pF at 10V, with a Logic Level Gate feature for enhanced drive flexibility. This MOSFET array is suitable for use in automotive and industrial power systems. The component is supplied in cut tape packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.7W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11A |
| Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-PQFN-Dual (3.3x3.3) |
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