IRFHM792TR2PBF
MOSFET 2N-CH 100V 2.3A 8PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies presents the IRFHM792TR2PBF, a high-performance MOSFET array featuring two N-channel depletion mode devices. Designed for demanding applications, this component boasts a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) capability of 2.3A at 25°C. The device exhibits a low on-resistance (Rds On) of 195mOhm maximum at 2.9A and 10V, ensuring efficient power delivery. With a maximum power dissipation of 2.3W and presented in a compact 8-PQFN-Dual (3.3x3.3) surface mount package, the IRFHM792TR2PBF is suitable for power management solutions in consumer electronics, industrial automation, and automotive systems. Key electrical parameters include a gate charge (Qg) of 6.3nC max @ 10V and input capacitance (Ciss) of 251pF max @ 25V. The component is supplied in cut tape packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.3W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 251pF @ 25V |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 10µA |
| Supplier Device Package | 8-PQFN-Dual (3.3x3.3) |