IRFH7911TRPBF
MOSFET 2N-CH 30V 13A/28A PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRFH7711TRPBF. This dual N-channel MOSFET array features a 30V drain-source voltage and continuous drain currents of 13A and 28A at 25°C. The device offers a low on-resistance of 8.6mOhm maximum at 12A and 10V, with a logic-level gate requirement. Key parameters include a gate charge (Qg) of 12nC maximum at 4.5V and input capacitance (Ciss) of 1060pF maximum at 15V. It is supplied in a PQFN (5x6) package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. The maximum power dissipation is rated at 2.4W and 3.4W. This component is utilized in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 18-PowerVQFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W, 3.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13A, 28A |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 15V |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 12A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | PQFN (5x6) |
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