IRFH7911TR2PBF
MOSFET 2N-CH 30V 13A/28A PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies MOSFET Array, part number IRFH711TR2PBF, is a dual 2-channel device featuring N-channel enhancement mode Metal Oxide Semiconductor Field-Effect Transistors. This component offers a 30V drain-source voltage (Vdss) and optimized performance with a low Rds(on) of 8.6mOhm at 12A and 10V Vgs. The device supports logic level gate drive, with a gate charge (Qg) of 12nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 1060pF maximum at 15V Vds. Continuous drain current capabilities are 13A and 28A at 25°C, with maximum power dissipation of 2.4W and 3.4W respectively. Packaged in a 18-PowerVQFN (5x6) surface mount configuration, this MOSFET array is suitable for applications in automotive and industrial power management. The component is supplied in Cut Tape (CT).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 18-PowerVQFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W, 3.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 13A, 28A |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 15V |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 12A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | PQFN (5x6) |
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