IRFH4255DTRPBF
MOSFET 2N-CH 25V 64A/105A PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRFH4255DTRPBF, features two N-channel power MOSFETs in a PQFN (5x6) package. This device offers a 25V drain-source voltage rating and supports continuous drain currents of 64A and 105A at 25°C. The MOSFETs are designed with a logic level gate, indicated by a Vgs(th) of 2.1V at 35µA and a gate charge of 15nC at 4.5V. Key electrical parameters include a maximum RDS(on) of 3.2mOhm at 30A and 10V, and input capacitance (Ciss) of 1314pF at 13V. Dissipation ratings are 31W and 38W. The IRFH4255DTRPBF is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial power management applications. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 31W, 38W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 64A, 105A |
| Input Capacitance (Ciss) (Max) @ Vds | 1314pF @ 13V |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
| Supplier Device Package | PQFN (5x6) |
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