IRFH4253DTRPBF
MOSFET 2N-CH 25V 64A/145A PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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The Infineon Technologies HEXFET® IRFH4253DTRPBF is a dual N-channel MOSFET array designed for high-performance applications. This component features a 25V drain-source voltage rating and offers continuous drain current capabilities of 64A and 145A, with maximum power dissipation of 31W and 50W respectively. The device utilizes MOSFET technology and is housed in a PQFN (5x6) package, suitable for surface mounting. Key electrical specifications include a low Rds(on) of 3.2mOhm at 30A and 10V, a gate charge (Qg) of 15nC at 4.5V, and input capacitance (Ciss) of 1314pF at 13V. The operating temperature range is from -55°C to 150°C. This component is commonly found in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 31W, 50W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 64A, 145A |
| Input Capacitance (Ciss) (Max) @ Vds | 1314pF @ 13V |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
| Supplier Device Package | PQFN (5x6) |
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