IRFH4251DTRPBF
MOSFET 2N-CH 25V 64A/188A TISON8Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies FASTIRFET™ MOSFET array, part number IRFH4251DTRPBF, features two N-channel MOSFETs in a PG-TISON-8 package. This device offers a 25V drain-to-source voltage and continuous drain current ratings of 64A and 188A, with maximum power dissipation of 31W and 63W respectively. The MOSFETs utilize Metal Oxide technology and are designed with logic-level gates, simplifying drive requirements. Key electrical parameters include a maximum Rds On of 3.2mOhm at 30A and 10V Vgs, a gate charge (Qg) of 15nC at 4.5V, and an input capacitance (Ciss) of 1314pF at 13V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial power management systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: FASTIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual), Schottky |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 31W, 63W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 64A, 188A |
| Input Capacitance (Ciss) (Max) @ Vds | 1314pF @ 13V |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
| Supplier Device Package | PG-TISON-8 |
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