IRF9956TRPBF
MOSFET 2N-CH 30V 3.5A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF9956TRPBF features a dual N-channel MOSFET configuration in an 8-SOIC package. This device offers a continuous drain current of 3.5A at 25°C and a drain-to-source voltage of 30V. The MOSFET technology provides a low Rds(On) of 100mOhm maximum at 2.2A and 10V, with a gate charge of 14nC maximum at 10V. Key parameters include a 190pF maximum input capacitance at 15V and a logic level gate. Rated for 2W maximum power dissipation, this component is suitable for surface mount applications and operates within a temperature range of -55°C to 150°C. Industries utilizing this component include automotive and industrial automation. The packaging is Tape & Reel (TR).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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