IRF9956
MOSFET 2N-CH 30V 3.5A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF9956 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a 30V drain-to-source voltage and a continuous drain current capability of 3.5A at 25°C. The device offers a low Rds(on) of 100mOhm maximum at 2.2A and 10V, coupled with a logic level gate for enhanced drive flexibility. Input capacitance (Ciss) is specified at 190pF maximum at 15V, with a gate charge (Qg) of 14nC at 10V. The IRF9956 is housed in an 8-SOIC (0.154" width) surface-mount package, capable of dissipating up to 2W. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET array finds application in various industrial and consumer electronics, including power management and control circuits.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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