IRF9953TR
MOSFET 2P-CH 30V 2.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF9953TR is a dual P-channel MOSFET array designed for demanding applications. This surface-mount device, packaged in an 8-SOIC case, features a 30V drain-to-source voltage and a continuous drain current of 2.3A at 25°C. With a maximum power dissipation of 2W, it offers a low on-resistance of 250mOhm at 1A, 10V. The logic-level gate feature simplifies drive circuitry, and the typical gate charge is 12nC at 10V. Input capacitance (Ciss) is a maximum of 190pF at 15V. Operating across a wide temperature range of -55°C to 150°C, this component is suitable for use in automotive and industrial power management systems. The device is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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