IRF9953PBF
MOSFET 2P-CH 30V 2.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF9953PBF is a dual P-channel MOSFET array designed for efficient power switching applications. This component features a Vds of 30V and a continuous drain current (Id) capability of 2.3A at 25°C. The device exhibits a low Rds On of 250mOhm maximum at 1A and 10V Vgs, with a typical gate charge (Qg) of 12nC at 10V and input capacitance (Ciss) of 190pF at 15V. Packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting, it offers a maximum power dissipation of 2W and operates across a wide temperature range of -55°C to 150°C. Applications include power management, motor control, and battery charging systems in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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