IRF9952TR
MOSFET N/P-CH 30V 3.5A/2.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array featuring N-channel and P-channel transistors in a single 8-SOIC package. This device offers a Drain-Source Voltage (Vdss) of 30V with continuous drain currents of 3.5A for the N-channel and 2.3A for the P-channel at 25°C. Key performance parameters include a maximum Rds(On) of 100mOhm at 2.2A and 10V, and a logic level gate for enhanced drive capability. Input capacitance (Ciss) is a maximum of 190pF at 15V, with a gate charge (Qg) of 14nC at 10V. The IRF9952TR is rated for 2W maximum power dissipation and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power management, battery charging, and general-purpose switching applications across various industrial and consumer electronics sectors. The part is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A, 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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