IRF9910TRPBF-1
MOSFET 2N-CH 20V 10A/12A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF9910TRPBF-1 is a dual N-channel MOSFET array in an 8-SOIC package. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 10A (Ta) and 12A (Ta) at 25°C, with a maximum power dissipation of 2W (Ta). Key electrical parameters include Rds On values of 13.4mOhm @ 10A, 10V and 9.3mOhm @ 12A, 10V. Gate charge (Qg) is specified at 11nC and 23nC (Max) @ 4.5V, with input capacitance (Ciss) at 900pF and 1860pF (Max) @ 10V. The IRF9910TRPBF-1 is suitable for applications in the automotive and industrial sectors. Operating temperature range is -55°C to 150°C (TJ). This component is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 12A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V, 1860pF @ 10V |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V, 23nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | 8-SOIC |
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