IRF9910TRPBF
MOSFET 2N-CH 20V 10A/12A 8-SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRF9910TRPBF. This device features two N-channel MOSFETs with a 20V drain-source voltage (Vdss). Continuous drain current (Id) is rated at 10A and 12A at 25°C. The MOSFETs offer logic-level gate drive, with a typical gate charge (Qg) of 11nC at 4.5V and a threshold voltage (Vgs(th)) of 2.55V at 250µA. On-resistance (Rds On) is a maximum of 9.3mOhm at 12A and 10V. This surface mount component is housed in an 8-SOIC package and supports a maximum power dissipation of 2W. Operating temperature range is -55°C to 150°C. The IRF9910TRPBF is suitable for applications in automotive, industrial, and consumer electronics requiring efficient power switching. It is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 12A |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 12A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | 8-SO |
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