IRF9910TR
MOSFET 2N-CH 20V 10A/12A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF9910TR is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 20V drain-source voltage (Vdss) and continuous drain current ratings of 10A and 12A for the individual channels at 25°C. The device offers a low Rds(on) of 13.4mOhm maximum at 10A and 10V, facilitating reduced conduction losses. With a logic-level gate feature and a gate charge (Qg) of 11nC maximum at 4.5V, it is suitable for driving with lower gate drive voltages. The input capacitance (Ciss) is 900pF maximum at 10V. Packaged in an 8-SOIC surface mount configuration, this component can dissipate up to 2W of power. Operating temperature range is -55°C to 150°C. The IRF9910TR is commonly utilized in computing, industrial, and automotive sectors for power management solutions.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 12A |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | 8-SO |
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