IRF9910PBF
MOSFET 2N-CH 20V 10A/12A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF9910PBF is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 20V Drain-to-Source voltage (Vdss) and supports continuous drain currents of 10A and 12A, respectively, at 25°C. The device offers a low Rds(On) of 13.4mOhm maximum at 10A and 10V, with a logic-level gate for enhanced drive flexibility. Key parameters include a gate charge (Qg) of 11nC maximum at 4.5V and input capacitance (Ciss) of 900pF maximum at 10V. The IRF9910PBF is housed in an 8-SOIC package (0.154", 3.90mm width) suitable for surface mounting and dissipates a maximum power of 2W. It operates across a wide temperature range of -55°C to 150°C. This component is widely utilized in automotive systems, industrial power supply, and telecommunications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 12A |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | 8-SO |
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