IRF9910
MOSFET 2N-CH 20V 10A/12A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF9910 is a dual N-channel Power MOSFET array designed for high-efficiency switching applications. This component offers a Drain-to-Source Voltage (Vdss) of 20V and continuous drain current capabilities of 10A and 12A at 25°C for each channel. Featuring a logic-level gate, the IRF9910 is suitable for direct drive from low-voltage microcontrollers. Key electrical parameters include a maximum Rds(On) of 13.4mOhm at 10A and 10V, and a gate charge (Qg) of 11nC at 4.5V. The device has an input capacitance (Ciss) of 900pF at 10V and a maximum power dissipation of 2W. Packaged in an 8-SOIC (0.154" width) for surface mounting, the IRF9910 operates across a wide temperature range of -55°C to 150°C. This MOSFET array finds utility in automotive, industrial, and consumer electronics sectors requiring efficient power management.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 12A |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | 8-SO |
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