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IRF9395MTR1PBF

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IRF9395MTR1PBF

MOSFET 2P-CH 30V 14A DIRECTFETMC

Manufacturer: Infineon Technologies

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Infineon Technologies HEXFET® IRF9395MTR1PBF is a 2 P-channel MOSFET array designed for high-efficiency power management applications. This component features a 30V drain-to-source voltage and a continuous drain current capability of 14A at 25°C. With a low Rds(on) of 7mOhm at 14A and 10V, it minimizes conduction losses. The Logic Level Gate feature enhances compatibility with lower voltage control signals. The DIRECTFET™ Isometric MC package offers superior thermal performance for surface mount applications, with a power dissipation of 2.1W. Key parameters include a maximum gate charge of 64nC at 10V and an input capacitance (Ciss) of 3241pF at 15V. Operating temperature ranges from -40°C to 150°C. This device is commonly utilized in automotive, industrial automation, and power supply designs.

Additional Information

Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric MC
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.1W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C14A
Input Capacitance (Ciss) (Max) @ Vds3241pF @ 15V
Rds On (Max) @ Id, Vgs7mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.4V @ 50µA
Supplier Device PackageDIRECTFET™ MC

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