IRF9389PBF
MOSFET N/P-CH 30V 6.8A/4.6A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRF9389PBF, offers a complementary N-channel and P-channel configuration in a space-saving 8-SOIC package. This device features a 30V drain-source voltage rating and continuous drain currents of 6.8A for the N-channel and 4.6A for the P-channel at 25°C. Optimized for efficiency, it boasts a maximum on-resistance of 27mOhm at 6.8A and 10V Vgs. The logic-level gate ensures compatibility with lower voltage control signals. With a gate charge of 14nC at 10V and input capacitance of 398pF at 15V, it is well-suited for power management applications in automotive and industrial sectors. The IRF9389PBF is rated for a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A, 4.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 398pF @ 15V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.3V @ 10µA |
| Supplier Device Package | 8-SO |
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