IRF9362PBF
MOSFET 2P-CH 30V 8A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF9362PBF is a 30V, 8A dual P-channel MOSFET array in an 8-SOIC package. This surface-mount component offers a low Rds(on) of 21mOhm at 8A, 10V, and features a logic-level gate for enhanced drive flexibility. With a continuous drain current capability of 8A and a maximum power dissipation of 2W, it is suitable for applications requiring efficient power switching. The device boasts low input capacitance (1300pF) and gate charge (39nC), contributing to improved switching performance. It operates across a wide temperature range of -55°C to 150°C. Applications include power management, battery charging, and motor control circuits.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Supplier Device Package | 8-SO |