IRF8915TRPBF
MOSFET 2N-CH 20V 8.9A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF8915TRPBF is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 8.9A at 25°C. The device boasts a low Rds(on) of 18.3mOhm maximum at 8.9A and 10V, coupled with a logic-level gate for enhanced drive flexibility. Its low gate charge (Qg) of 7.4nC maximum at 4.5V and input capacitance (Ciss) of 540pF maximum at 10V contribute to improved switching performance. Packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting, this MOSFET array supports a maximum power dissipation of 2W and operates across a wide temperature range of -55°C to 150°C. The IRF8915TRPBF is commonly utilized in consumer electronics and industrial automation systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 10V |
| Rds On (Max) @ Id, Vgs | 18.3mOhm @ 8.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
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