IRF8915TR
MOSFET 2N-CH 20V 8.9A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET array, part number IRF8915TR, features a dual N-channel configuration with a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 8.9A at 25°C. This surface-mount component, housed in an 8-SOIC package, offers a low Rds(On) of 18.3mOhm at 8.9A, 10V and a logic-level gate for enhanced drivability. Key parameters include an input capacitance (Ciss) of 540pF at 10V and a gate charge (Qg) of 7.4nC at 4.5V. With a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in consumer electronics, industrial control, and power management systems. The device is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 10V |
| Rds On (Max) @ Id, Vgs | 18.3mOhm @ 8.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
