IRF8915
MOSFET 2N-CH 20V 8.9A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF8915 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This surface-mount component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 8.9A at 25°C, with a low on-resistance (Rds On) of 18.3mOhm at 8.9A and 10V. The logic-level gate drive capability simplifies interfacing with microcontrollers. With a maximum power dissipation of 2W and a gate charge (Qg) of 7.4nC, this device is suitable for use in automotive, industrial, and consumer electronics where efficient power management is critical. The IRF8915 is supplied in an 8-SOIC package, offering a compact footprint for board-level integration. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 10V |
| Rds On (Max) @ Id, Vgs | 18.3mOhm @ 8.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
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