IRF8910TRPBFXTMA1
MOSFET 2N-CH 20V 10A 8DSO-902Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRF8910TRPBFXTMA1, features a 20V drain-source voltage and a continuous drain current of 10A at 25°C. This 2 N-channel device is housed in a PG-DSO-8-902 package with a surface mount configuration. Key electrical characteristics include a maximum on-resistance of 13.4mOhm at 10A and 10V, a gate charge of 11nC at 4.5V, and an input capacitance of 960pF at 10V. The device supports an operating temperature range of -55°C to 150°C. Its power dissipation is rated at 2W. This component is suitable for applications in computing and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 10V |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | PG-DSO-8-902 |
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