IRF8910TRPBF-1
MOSFET 2N-CH 20V 10A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF8910TRPBF-1 is a dual N-channel MOSFET array designed for surface mounting. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 10A at 25°C (Ta). The on-resistance (Rds On) is specified at a maximum of 13.4mOhm at 10A and 10V. Key parameters include a Gate Charge (Qg) of 11nC (Max) at 4.5V and an input capacitance (Ciss) of 960pF (Max) at 10V. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) and can operate within a temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 2W (Ta). This MOSFET array finds application in power management solutions across various industries.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 10V |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | 8-SO |
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