IRF8910PBF
MOSFET 2N-CH 20V 10A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF8910PBF is a dual N-channel MOSFET array offering 20V drain-source breakdown voltage and 10A continuous drain current. This surface mount device, packaged in an 8-SOIC, features a low Rds(on) of 13.4mOhm at 10A and 10V. The logic-level gate drive capability, with a Vgs(th) of 2.55V, simplifies interfacing with various control signals. Its 2W power dissipation and 11nC gate charge make it suitable for applications requiring efficient switching. Typical industries utilizing this component include industrial automation and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 10V |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | 8-SO |
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