IRF8910GTRPBF
MOSFET 2N-CH 20V 10A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF8910GTRPBF is a dual N-channel Power MOSFET designed for high-performance switching applications. This surface-mount component features a 20V Drain-Source voltage (Vdss) and a continuous Drain current (Id) of 10A at 25°C, with a low on-resistance of 13.4mOhm maximum at 10A, 10V. The device utilizes a logic level gate for enhanced drive flexibility. Key parameters include a maximum power dissipation of 2W and a gate charge (Qg) of 11nC at 4.5V. The input capacitance (Ciss) is 960pF maximum at 10V. The IRF8910GTRPBF is supplied in an 8-SOIC package on tape and reel, suitable for automated assembly. Its operational temperature range is -55°C to 150°C (TJ). This MOSFET array finds application in power supply units, battery management systems, and motor control circuits within the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 10V |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | 8-SO |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
