IRF8852TRPBF
MOSFET 2N-CH 25V 7.8A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET array, part number IRF8852TRPBF, features a dual N-channel configuration with a 25V drain-source voltage. This surface mount component, housed in an 8-TSSOP package, offers a continuous drain current of 7.8A at 25°C. It boasts a low Rds On of 11.3mOhm at 7.8A and 10V, with a logic level gate feature. Key parameters include a gate charge of 9.5nC at 4.5V and an input capacitance of 1151pF at 20V. The device is rated for a maximum power dissipation of 1W and operates within a temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in automotive and industrial power management applications. The component is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 7.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1151pF @ 20V |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 7.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-TSSOP |
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