IRF8513TRPBF
MOSFET 2N-CH 30V 8A/11A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF8513TRPBF is a dual N-channel Power MOSFET array designed for demanding applications. This device features a 30V Drain-Source voltage (Vdss) and continuous drain currents of 8A and 11A at 25°C. With a low on-resistance of 15.5mOhm at 8A and 10V, it minimizes conduction losses. The logic-level gate feature simplifies drive requirements. Key parameters include a maximum gate charge (Qg) of 8.6nC at 4.5V and input capacitance (Ciss) of 766pF at 15V. The MOSFET array is housed in an 8-SOIC package suitable for surface mounting and is supplied on tape and reel for automated assembly. Power dissipation ratings are 1.5W and 2.4W, respectively. This component is utilized in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W, 2.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A, 11A |
| Input Capacitance (Ciss) (Max) @ Vds | 766pF @ 15V |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-SO |
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