IRF8513PBF
MOSFET 2N-CH 30V 8A/11A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRF8513PBF is a dual N-channel MOSFET array packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting. This device features a Drain-to-Source Voltage (Vdss) of 30V and offers continuous drain currents of 8A and 11A at 25°C, with maximum power dissipations of 1.5W and 2.4W respectively. The MOSFETs utilize a logic-level gate drive, with a typical gate charge (Qg) of 8.6nC at 4.5V and a threshold voltage (Vgs(th)) of 2.35V at 25µA. The on-resistance (Rds On) is a maximum of 15.5mOhm at 8A and 10V. Input capacitance (Ciss) is rated at a maximum of 766pF at 15V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W, 2.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A, 11A |
| Input Capacitance (Ciss) (Max) @ Vds | 766pF @ 15V |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-SO |
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