IRF8313TRPBF
MOSFET 2N-CH 30V 9.7A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF8313TRPBF, a dual N-channel MOSFET array, offers a 30V Drain-Source Voltage (Vdss) and 9.7A continuous drain current at 25°C. This surface mount component, packaged in an 8-SOIC, features a logic level gate for enhanced driving flexibility. Key electrical parameters include a maximum Rds On of 15.5mOhm at 9.7A and 10V, and a gate charge (Qg) of 9nC at 4.5V. With a maximum power dissipation of 2W and an operating temperature range of -55°C to 175°C, this device is suitable for applications in automotive and industrial sectors. The input capacitance (Ciss) is rated at a maximum of 760pF at 15V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 15V |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 9.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-SO |