IRF8313PBF
MOSFET 2N-CH 30V 9.7A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies MOSFET, part number IRF8313PBF, is a dual N-channel device designed for efficient power switching applications. This 8-SOIC package component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 9.7A at 25°C. The MOSFET Array offers a low on-resistance (Rds On) of 15.5mOhm maximum at 9.7A and 10V Vgs, with a logic level gate for enhanced drive compatibility. Its 2W maximum power dissipation and a wide operating temperature range of -55°C to 175°C make it suitable for demanding environments. Key parameters include a gate charge (Qg) of 90nC maximum at 4.5V and input capacitance (Ciss) of 760pF maximum at 15V. This component finds application in industrial and automotive sectors requiring robust power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 15V |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 9.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-SO |
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