IRF7910PBF
MOSFET 2N-CH 12V 10A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® series IRF7910PBF is a dual N-channel Power MOSFET designed for efficient power switching applications. This component features a 12V drain-source voltage rating and a continuous drain current capability of 10A at 25°C, with a low on-resistance of 15mOhm at 8A and 4.5V Vgs. The device offers a logic-level gate for compatibility with lower voltage control circuitry. Key electrical characteristics include a gate charge (Qg) of 26nC at 4.5V and an input capacitance (Ciss) of 1730pF at 6V. The IRF7910PBF is housed in an 8-SOIC surface-mount package with a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 6V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
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