IRF7907PBF
MOSFET 2N-CH 30V 9.1A/11A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7907PBF is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This device features a drain-to-source voltage (Vdss) of 30V and continuous drain currents of 9.1A and 11A per channel at 25°C. With a low on-resistance (Rds On) of 16.4mOhm at 9.1A and 10V, it minimizes conduction losses. The logic level gate feature enables operation with lower gate drive voltages. Key parameters include a gate charge (Qg) of 10nC at 4.5V and input capacitance (Ciss) of 850pF at 15V. The IRF7907PBF is supplied in an 8-SOIC package for surface mounting, with a maximum power dissipation of 2W. It operates across a wide temperature range of -55°C to 150°C, making it suitable for industrial, automotive, and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.1A, 11A |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 15V |
| Rds On (Max) @ Id, Vgs | 16.4mOhm @ 9.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | 8-SO |
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