IRF7904TRPBF-1
MOSFET 2N-CH 30V 7.6A/11A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7904TRPBF-1 is a 30V, dual N-channel MOSFET array designed for surface mount applications. This component features a low Rds(on) of 16.2mOhm at 7.6A and 10V Vgs, coupled with a logic-level gate for enhanced drive flexibility. With continuous drain currents of 7.6A and 11A, and power dissipation capabilities of 1.4W and 2W respectively, it is suitable for demanding power switching applications. The HEXFET® IRF7904TRPBF-1 offers a maximum gate charge of 11nC at 4.5V Vgs and an input capacitance of 910pF at 15V Vds. Packaged in an 8-SOIC (0.154" width) and supplied on tape and reel, this MOSFET array operates across a wide temperature range of -55°C to 150°C. Its capabilities make it a valuable component in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W, 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A, 11A |
| Input Capacitance (Ciss) (Max) @ Vds | 910pF @ 15V |
| Rds On (Max) @ Id, Vgs | 16.2mOhm @ 7.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.25V @ 25µA |
| Supplier Device Package | 8-SO |
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