IRF7904TRPBF
MOSFET 2N-CH 30V 7.6A/11A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7904TRPBF is a high-performance dual N-channel MOSFET array designed for power management applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and continuous drain currents of 7.6A and 11A at 25°C, respectively. The MOSFETs offer low on-resistance (Rds On) of 16.2mOhm maximum at 7.6A and 10V, with a logic-level gate feature for easier drive. Operating across a temperature range of -55°C to 150°C, it is housed in an 8-SOIC package suitable for surface mounting. Key electrical characteristics include a Gate Charge (Qg) of 11nC maximum at 4.5V and input capacitance (Ciss) of 910pF maximum at 15V. The device is supplied in Tape & Reel packaging. This component is frequently utilized in automotive and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W, 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A, 11A |
| Input Capacitance (Ciss) (Max) @ Vds | 910pF @ 15V |
| Rds On (Max) @ Id, Vgs | 16.2mOhm @ 7.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.25V @ 25µA |
| Supplier Device Package | 8-SO |
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