IRF7902PBF
MOSFET 2N-CH 30V 6.4A/9.7A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7902PBF is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 30V drain-source voltage rating and continuous drain currents of 6.4A and 9.7A at 25°C, respectively. The device offers low on-resistance of 22.6mOhm at 6.4A and 10V, and a maximum power dissipation of 1.4W and 2W for its two channels. With a logic-level gate, the IRF7902PBF is suitable for direct drive from low-voltage microcontrollers. Key parameters include a gate charge of 6.9nC at 4.5V and input capacitance of 580pF at 15V. The 8-SOIC package facilitates surface mounting, and the operating temperature range is -55°C to 150°C. This MOSFET array finds application in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W, 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A, 9.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 15V |
| Rds On (Max) @ Id, Vgs | 22.6mOhm @ 6.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.25V @ 25µA |
| Supplier Device Package | 8-SO |
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