IRF7901D1TRPBF
MOSFET 2N-CH 30V 6.2A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies FETKY™ series IRF7901D1TRPBF is a dual N-channel MOSFET array designed for high-efficiency power management applications. This 8-SOIC package device features a 30V drain-source voltage rating and a continuous drain current capability of 6.2A at 25°C. The logic level gate enhances compatibility with low-voltage control signals. With a low on-resistance of 38mOhm at 5A and 4.5V Vgs, and a maximum power dissipation of 2W, this component is suitable for power supply circuits, motor control, and battery management systems. Key parameters include a gate charge of 10.5nC (max) at 5V and input capacitance of 780pF (max) at 16V. The device operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 16V |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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