IRF7901D1TR
MOSFET 2N-CH 30V 6.2A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies' IRF7901D1TR is a dual N-channel MOSFET array from the FETKY™ series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.2A at 25°C. The MOSFETs offer a low Rds On of 38mOhm maximum at 5A and 4.5V, coupled with a logic level gate for enhanced control. Input capacitance (Ciss) is 780pF maximum at 16V, with a gate charge (Qg) of 10.5nC maximum at 5V. The device is rated for 2W maximum power dissipation. This surface mount component, packaged in an 8-SOIC (0.154" width), operates across a temperature range of -55°C to 150°C. It finds application in automotive and industrial power management solutions.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 16V |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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