IRF7901D1
MOSFET 2N-CH 30V 6.2A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies FETKY™ IRF7901D1 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.2A at 25°C. With a low Rds On of 38mOhm at 5A and 4.5V, it minimizes conduction losses. The logic-level gate ensures compatibility with lower voltage control signals, and a gate charge (Qg) of 10.5nC at 5V facilitates faster switching speeds. The input capacitance (Ciss) is 780pF max at 16V. This 8-SOIC package, with a width of 3.90mm, supports surface mounting and has a maximum power dissipation of 2W. Operating temperature ranges from -55°C to 150°C. The IRF7901D1 is suitable for use in power management, automotive systems, and industrial automation.
Additional Information
Series: FETKY™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 16V |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |