IRF7757TRPBF
MOSFET 2N-CH 20V 4.8A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET, part number IRF7757TRPBF, is a dual N-channel power MOSFET array designed for efficient power management. This component features a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 4.8A at 25°C. The logic-level gate functionality with a Vgs(th) of 1.2V at 250µA ensures compatibility with lower voltage control signals. With a low on-resistance (Rds On) of 35mOhm at 4.8A and 4.5V, and a gate charge (Qg) of 23nC at 4.5V, it offers high switching efficiency. The MOSFET array is packaged in an 8-TSSOP (0.173", 4.40mm width) for surface mounting and is supplied on tape and reel. Its maximum power dissipation is 1.2W, and it operates within a temperature range of -55°C to 150°C. This device is suitable for applications in automotive, industrial, and consumer electronics where compact, high-performance power switching is required.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1340pF @ 15V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |