IRF7757TR
MOSFET 2N-CH 20V 4.8A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7757TR is a dual N-Channel Power MOSFET designed for surface mount applications. This component offers a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 4.8A at 25°C. Featuring a Logic Level Gate, the IRF7757TR boasts a low Rds On of 35mOhm maximum at 4.8A and 4.5V Vgs. With a gate charge (Qg) of 23nC maximum at 4.5V and an input capacitance (Ciss) of 1340pF maximum at 15V, it is suitable for applications requiring efficient switching. The MOSFET array is packaged in an 8-TSSOP with a maximum power dissipation of 1.2W and operates across a temperature range of -55°C to 150°C. This device finds utility in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1340pF @ 15V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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