IRF7756TRPBF
MOSFET 2P-CH 12V 4.3A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Infineon Technologies HEXFET® IRF7756TRPBF is a surface-mount MOSFET array featuring two P-channel transistors in an 8-TSSOP package. This component offers a continuous drain current of 4.3A at 25°C and a drain-to-source voltage (Vdss) of 12V. With a maximum power dissipation of 1W and a low on-resistance of 40mOhm at 4.3A and 4.5V, it is suitable for applications requiring efficient power switching. The logic level gate feature simplifies drive requirements. Key parameters include a gate charge (Qg) of 18nC at 4.5V and input capacitance (Ciss) of 1400pF at 10V. This device operates across a temperature range of -55°C to 150°C. Its robust design makes it applicable in various industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 10V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-TSSOP |