IRF7756
MOSFET 2P-CH 12V 4.3A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRF7756, features a dual P-channel configuration with a 12V drain-source voltage (Vdss). This surface mount device, packaged in an 8-TSSOP, offers a continuous drain current (Id) of 4.3A at 25°C and a maximum power dissipation of 1W. The IRF7756 exhibits a low on-resistance of 40mOhm maximum at 4.3A and 4.5V (Vgs), along with a logic level gate feature for enhanced drive flexibility. Input capacitance (Ciss) is rated at 1400pF maximum at 10V, and gate charge (Qg) is 18nC maximum at 4.5V. The device operates within a temperature range of -55°C to 150°C. This component is suitable for applications in automotive, industrial control, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 10V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-TSSOP |
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