IRF7754TRPBF
MOSFET 2P-CH 12V 5.5A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRF7754TRPBF, offers a dual P-channel configuration with a 12V drain-source voltage and a continuous drain current of 5.5A per channel at 25°C. This surface mount device, packaged in an 8-TSSOP, features a logic-level gate, enabling operation with lower gate drive voltages. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 25mOhm at 5.4A and 4.5V Vgs, and a gate charge (Qg) of 22nC at 4.5V. With a maximum power dissipation of 1W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications requiring efficient power switching in portable electronics and battery management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1984pF @ 6V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 5.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 8-TSSOP |