IRF7752
MOSFET 2N-CH 30V 4.6A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7752 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 4.6A at 25°C. With a low Rds On of 30mOhm maximum at 4.6A and 10V Vgs, it minimizes conduction losses. The logic-level gate feature simplifies driving requirements, and a gate charge (Qg) of 9nC maximum at 4.5V Vgs contributes to faster switching speeds.
The IRF7752 boasts a maximum power dissipation of 1W and an input capacitance (Ciss) of 861pF. It is housed in an 8-TSSOP package suitable for surface mounting. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET array finds application in automotive, industrial, and consumer electronics sectors requiring compact and reliable power management solutions.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 861pF @ 25V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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