IRF7751TRPBF
MOSFET 2P-CH 30V 4.5A 8TSSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7751TRPBF is a dual P-channel MOSFET array designed for surface mount applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 4.5A at 25°C. The Rds On is specified at a maximum of 35mOhm at 4.5A and 10V, with a Logic Level Gate feature. The Gate Charge (Qg) is a maximum of 44nC at 10V, and the Input Capacitance (Ciss) is 1464pF at 25V. With a maximum power dissipation of 1W, it operates across a temperature range of -55°C to 150°C. The component is housed in an 8-TSSOP package and supplied on tape and reel. This MOSFET array is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1464pF @ 25V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |